Zenode.ai Logo
Beta
STH3N150-2
Discrete Semiconductor Products

STH3N150-2

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 1.5 KV, 2.5 A, 9 OHM, H2PAK-2, 3 PINS, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

STH3N150-2
Discrete Semiconductor Products

STH3N150-2

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 1.5 KV, 2.5 A, 9 OHM, H2PAK-2, 3 PINS, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTH3N150-2
Current - Continuous Drain (Id) @ 25°C2.5 A
Drain to Source Voltage (Vdss)1500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]29.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]939 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), Variant
Power Dissipation (Max) [Max]140 W
Rds On (Max) @ Id, Vgs9 Ohm
Supplier Device PackageH2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.30
10$ 4.23
100$ 3.06
500$ 2.56
Digi-Reel® 1$ 6.30
10$ 4.23
100$ 3.06
500$ 2.56
N/A 1802$ 5.14
Tape & Reel (TR) 1000$ 2.48

Description

General part information

STH3N150 Series

These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.100% avalanche testedIntrinsic capacitances and Qg minimizedHigh speed switchingFully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)