
Discrete Semiconductor Products
SI2327DS-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 380MA SOT23-3
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Discrete Semiconductor Products
SI2327DS-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 380MA SOT23-3
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SI2327DS-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 380 mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 750 mW |
| Rds On (Max) @ Id, Vgs [Max] | 2.35 Ohm |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SI2327 Series
P-Channel 200 V 380mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Documents
Technical documentation and resources
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