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SOT-23-3
Discrete Semiconductor Products

SI2327DS-T1-GE3

Obsolete

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SOT-23-3
Discrete Semiconductor Products

SI2327DS-T1-GE3

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2327DS-T1-GE3
Current - Continuous Drain (Id) @ 25°C380 mA
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds510 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)750 mW
Rds On (Max) @ Id, Vgs [Max]2.35 Ohm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SI2327 Series

P-Channel 200 V 380mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Documents

Technical documentation and resources

No documents available