SI2327 Series

Catalog

MOSFET P-CH 200V 380MA SOT23-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI2327DS-T1-E3	6 V 10 V	Surface Mount	510 pF	380 mA	2.35 Ohm	MOSFET (Metal Oxide)	12 nC	SC-59 SOT-23-3 TO-236-3	750 mW	SOT-23-3 (TO-236)	P-Channel	4.5 V	200 V	-55 °C	150 °C	20 V
Vishay General Semiconductor - Diodes Division SI2327DS-T1-GE3	6 V 10 V	Surface Mount	510 pF	380 mA	2.35 Ohm	MOSFET (Metal Oxide)	12 nC	SC-59 SOT-23-3 TO-236-3	750 mW	SOT-23-3 (TO-236)	P-Channel	4.5 V	200 V	-55 °C	150 °C	20 V