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FDS86242
Discrete Semiconductor Products

FDS8884

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 8.5 A, 0.023 OHM, SOIC, SURFACE MOUNT

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FDS86242
Discrete Semiconductor Products

FDS8884

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 8.5 A, 0.023 OHM, SOIC, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS8884
Current - Continuous Drain (Id) @ 25°C8.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds635 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.97
10$ 0.61
100$ 0.40
500$ 0.31
1000$ 0.28
Digi-Reel® 1$ 0.97
10$ 0.61
100$ 0.40
500$ 0.31
1000$ 0.28
Tape & Reel (TR) 2500$ 0.24
5000$ 0.23
7500$ 0.21
12500$ 0.20
17500$ 0.20
NewarkEach (Supplied on Cut Tape) 1$ 0.99
10$ 0.68
25$ 0.62
50$ 0.56
100$ 0.50
250$ 0.46
500$ 0.42
1000$ 0.39
ON SemiconductorN/A 1$ 0.21

Description

General part information

FDS8884 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.