APTGT35H120T3G

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IGBT MODULE 1200V 55A 208W SP3

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Discrete Semiconductor Products

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IGBT MODULE 1200V 55A 208W SP3

Technical Specifications

Parameters and characteristics for this part

Specification	APTGT35H120T3G

Configuration	Full Bridge Inverter
Current - Collector (Ic) (Max) [Max]	55 A
Current - Collector Cutoff (Max) [Max]	250 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	2.5 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP3
Power - Max [Max]	208 W
Supplier Device Package	SP3
Vce(on) (Max) @ Vge, Ic [Max]	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

1200V/Full bridge/IGBT modules

Part	Vce(on) (Max) @ Vge, Ic [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	NTC Thermistor	Mounting Type	IGBT Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Configuration	Input Capacitance (Cies) @ Vce
Microchip Technology APTGT35H120T3G	2.1 V	SP3	1200 V	Standard	208 W	55 A	150 °C	-40 °C		Chassis Mount	Trench Field Stop	SP3	250 µA	Full Bridge Inverter	2.5 nF
Microchip Technology APTGT35X120T3G	2.1 V	SP3	1200 V	Standard	208 W	55 A	150 °C	-40 °C		Chassis Mount	Trench Field Stop	SP3	250 µA	Three Phase Inverter	2.5 nF

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