Integrated Circuits (ICs)

LM5100ASDX

Obsolete

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

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Integrated Circuits (ICs)

LM5100ASDX

Obsolete

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LM5100ASDX

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	3 A
Current - Peak Output (Source, Sink) [custom]	3 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	118 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	-
Logic Voltage - VIL, VIH	2.3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	10-WDFN Exposed Pad
Rise / Fall Time (Typ) [custom]	260 ns
Rise / Fall Time (Typ) [custom]	430 ns
Supplier Device Package	10-WSON (4x4)
Voltage - Supply [Max]	14 V
Voltage - Supply [Min]	9 V

LM5100A Series

3-A, 100-V half bridge gate driver with 8-V UVLO and CMOS inputs

Part	Gate Type	Input Type	Mounting Type	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Logic Voltage - VIL, VIH	Logic Voltage - VIL, VIH	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Min]	Voltage - Supply [Max]	Driven Configuration
Texas Instruments LM5100AM/NOPB	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	8-SOIC	-	2.3 V	8-SOIC	3.9 mm	0.154 in	260 ns	430 ns	3 A	3 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100AMX/NOPB	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	8-SOIC	-	2.3 V	8-SOIC	3.9 mm	0.154 in	260 ns	430 ns	3 A	3 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100CMAX/NOPB	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	8-SOIC	-	2.3 V	8-SOIC	3.9 mm	0.154 in	715 ns	990 ns	1 A	1 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100MX/NOPB	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	8-SOIC		3 V 8 V	8-SOIC	3.9 mm	0.154 in	600 ns	600 ns	1.6 A	1.6 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100CSD/NOPB	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	10-WSON (4x4)	-	2.3 V	10-WDFN Exposed Pad			715 ns	990 ns	1 A	1 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100ASDX	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	10-WSON (4x4)	-	2.3 V	10-WDFN Exposed Pad			260 ns	430 ns	3 A	3 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100BMAX/NOPB	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	8-SOIC	-	2.3 V	8-SOIC	3.9 mm	0.154 in	430 ns	570 ns	2 A	2 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100BMAX	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	8-SOIC	-	2.3 V	8-SOIC	3.9 mm	0.154 in	430 ns	570 ns	2 A	2 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100AMRX/NOPB	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	8-SO PowerPad	-	2.3 V	8-PowerSOIC	3.9 mm	0.154 in	260 ns	430 ns	3 A	3 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge
Texas Instruments LM5100ASD/NOPB	N-Channel MOSFET	Non-Inverting	Surface Mount	Independent	118 V	10-WSON (4x4)	-	2.3 V	10-WDFN Exposed Pad			260 ns	430 ns	3 A	3 A	2	-40 °C	125 ¯C	9 V	14 V	Half-Bridge

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

LM5100A Series

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

Documents

Technical documentation and resources