LM5100A Series
3-A, 100-V half bridge gate driver with 8-V UVLO and CMOS inputs
Manufacturer: Texas Instruments
Catalog
3-A, 100-V half bridge gate driver with 8-V UVLO and CMOS inputs
| Part | Gate Type | Input Type | Mounting Type | Channel Type | High Side Voltage - Max (Bootstrap) [Max] | Supplier Device Package | Logic Voltage - VIL, VIH | Logic Voltage - VIL, VIH | Package / Case | Package / Case [y] | Package / Case [x] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Number of Drivers | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Min] | Voltage - Supply [Max] | Driven Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 8-SOIC | - | 2.3 V | 8-SOIC | 3.9 mm | 0.154 in | 260 ns | 430 ns | 3 A | 3 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge |
Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 8-SOIC | - | 2.3 V | 8-SOIC | 3.9 mm | 0.154 in | 260 ns | 430 ns | 3 A | 3 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge |
Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 8-SOIC | - | 2.3 V | 8-SOIC | 3.9 mm | 0.154 in | 715 ns | 990 ns | 1 A | 1 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge |
Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 8-SOIC | 3 V 8 V | 8-SOIC | 3.9 mm | 0.154 in | 600 ns | 600 ns | 1.6 A | 1.6 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge | |
 Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 10-WSON (4x4) | - | 2.3 V | 10-WDFN Exposed Pad | 715 ns | 990 ns | 1 A | 1 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge | ||
 Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 10-WSON (4x4) | - | 2.3 V | 10-WDFN Exposed Pad | 260 ns | 430 ns | 3 A | 3 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge | ||
 Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 8-SOIC | - | 2.3 V | 8-SOIC | 3.9 mm | 0.154 in | 430 ns | 570 ns | 2 A | 2 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge |
Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 8-SOIC | - | 2.3 V | 8-SOIC | 3.9 mm | 0.154 in | 430 ns | 570 ns | 2 A | 2 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge |
 Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 8-SO PowerPad | - | 2.3 V | 8-PowerSOIC | 3.9 mm | 0.154 in | 260 ns | 430 ns | 3 A | 3 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge |
Texas Instruments | N-Channel MOSFET | Non-Inverting | Surface Mount | Independent | 118 V | 10-WSON (4x4) | - | 2.3 V | 10-WDFN Exposed Pad | 260 ns | 430 ns | 3 A | 3 A | 2 | -40 °C | 125 ¯C | 9 V | 14 V | Half-Bridge |
Key Features
• Drives Both a High-Side and Low-Side N-ChannelMOSFETsIndependent High- and Low-Driver Logic InputsBootstrap Supply Voltage up to 118 V DCFast Propagation Times (25-ns Typical)Drives 1000-pF Load With 8-ns Rise and FallTimesExcellent Propagation Delay Matching (3-nsTypical)Supply Rail Undervoltage LockoutLow Power ConsumptionPin Compatible With HIP2100/HIP2101Drives Both a High-Side and Low-Side N-ChannelMOSFETsIndependent High- and Low-Driver Logic InputsBootstrap Supply Voltage up to 118 V DCFast Propagation Times (25-ns Typical)Drives 1000-pF Load With 8-ns Rise and FallTimesExcellent Propagation Delay Matching (3-nsTypical)Supply Rail Undervoltage LockoutLow Power ConsumptionPin Compatible With HIP2100/HIP2101
Description
AI
The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).
An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.
The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).
An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.