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Microchip Technology-2N2857 RF BJT Trans RF BJT NPN 15V 0.04A 200mW 4-Pin TO-72
Discrete Semiconductor Products

JANTXV2N918

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Microchip Technology

TRANS RF BJT NPN 15V 0.05A 200MW 4-PIN TO-72 BAG

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Documents2N918 2N918UB
Microchip Technology-2N2857 RF BJT Trans RF BJT NPN 15V 0.04A 200mW 4-Pin TO-72
Discrete Semiconductor Products

JANTXV2N918

Active
Microchip Technology

TRANS RF BJT NPN 15V 0.05A 200MW 4-PIN TO-72 BAG

Deep-Dive with AI

Documents2N918 2N918UB

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N918
Current - Collector (Ic) (Max) [Max]50 mA
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-206AF, TO-72-4 Metal Can
Power - Max [Max]200 mW
QualificationMIL-PRF-19500/301
Supplier Device PackageTO-72
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 101$ 13.39
Microchip DirectN/A 1$ 14.42
NewarkEach 100$ 13.39
500$ 12.88

Description

General part information

JANTXV2N918-Transistor Series

This specification covers the detail requirements for NPN, silicon, ultra-high frequency 2N918 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/301 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated die devices. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Documents

Technical documentation and resources