Specification	SSM3K56CT,L3F

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	55 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	235 mOhm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

SSM3K56 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-723(VESM)

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Package / Case	FET Type	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3K56ACT,L3F	1.5 V 4.5 V	1 nC	150 °C	SC-101 SOT-883	N-Channel	MOSFET (Metal Oxide)	Surface Mount	20 V	55 pF	235 mOhm	8 V	CST3	1.4 A	500 mW	1 V
Toshiba Semiconductor and Storage SSM3K56CT,L3F	1.5 V 4.5 V	1 nC	150 °C	SC-101 SOT-883	N-Channel	MOSFET (Metal Oxide)	Surface Mount	20 V	55 pF	235 mOhm	8 V	CST3	800 mA	500 mW	1 V
Toshiba Semiconductor and Storage SSM3K56FS,LF	1.5 V 4.5 V	1 nC	150 °C	SC-75 SOT-416	N-Channel	MOSFET (Metal Oxide)	Surface Mount	20 V	55 pF	235 mOhm	8 V	SSM	800 mA		1 V	150 mW
Toshiba Semiconductor and Storage SSM3K56MFV,L3F	1.5 V 4.5 V	1 nC	150 °C	SOT-723	N-Channel	MOSFET (Metal Oxide)	Surface Mount	20 V	55 pF	235 mOhm	8 V	VESM	800 mA		1 V	150 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-723(VESM)

Technical documentation and resources