High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-723(VESM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-723(VESM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-723(VESM)
| Part | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Package / Case | FET Type | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1.5 V 4.5 V | 1 nC | 150 °C | SC-101 SOT-883 | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 20 V | 55 pF | 235 mOhm | 8 V | CST3 | 1.4 A | 500 mW | 1 V | |
 Toshiba Semiconductor and Storage | 1.5 V 4.5 V | 1 nC | 150 °C | SC-101 SOT-883 | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 20 V | 55 pF | 235 mOhm | 8 V | CST3 | 800 mA | 500 mW | 1 V | |
 Toshiba Semiconductor and Storage | 1.5 V 4.5 V | 1 nC | 150 °C | SC-75 SOT-416 | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 20 V | 55 pF | 235 mOhm | 8 V | SSM | 800 mA | 1 V | 150 mW | |
 Toshiba Semiconductor and Storage | 1.5 V 4.5 V | 1 nC | 150 °C | SOT-723 | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 20 V | 55 pF | 235 mOhm | 8 V | VESM | 800 mA | 1 V | 150 mW |