Discrete Semiconductor Products
STGF6NC60HD
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 6A 3-PIN(3+TAB) TO-220FP TUBE
Discrete Semiconductor Products
STGF6NC60HD
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 6A 3-PIN(3+TAB) TO-220FP TUBE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGF6NC60HD |
|---|---|
| Current - Collector Pulsed (Icm) | 21 A |
| Gate Charge | 13.6 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 20 W |
| Reverse Recovery Time (trr) | 21 ns |
| Supplier Device Package | TO-220FP |
| Switching Energy | 68 µJ, 20 µJ |
| Td (on/off) @ 25°C [custom] | 12 ns |
| Td (on/off) @ 25°C [custom] | 76 ns |
| Test Condition | 15 V, 390 V, 3 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
STGF6NC60HD Series
N-channel 600 V, 7 A Very fast IGBT
| Part | Test Condition | Package / Case | Vce(on) (Max) @ Vge, Ic [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Gate Charge | Supplier Device Package | Current - Collector Pulsed (Icm) | Power - Max [Max] | Switching Energy | Mounting Type | Reverse Recovery Time (trr) | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 3 A 10 Ohm 15 V 390 V | TO-220-3 Full Pack | 2.5 V | 600 V | 13.6 nC | TO-220FP | 21 A | 20 W | 20 µJ 68 µJ | Through Hole | 21 ns | 12 ns | 76 ns | 150 °C | -55 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2021 | $ 1.70 | |
Description
General part information
STGF6NC60HD Series
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.