Zenode.ai Logo
Beta
2N4912
Discrete Semiconductor Products

JANTX2N6300

Active
Microchip Technology

TRANS DARLINGTON NPN 60V 8A 75000MW 3-PIN(2+TAB) TO-66 TRAY

Deep-Dive with AI

Search across all available documentation for this part.

2N4912
Discrete Semiconductor Products

JANTX2N6300

Active
Microchip Technology

TRANS DARLINGTON NPN 60V 8A 75000MW 3-PIN(2+TAB) TO-66 TRAY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N6300
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]750
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]75 W
QualificationMIL-PRF-19500/539
Supplier Device PackageTO-66 (TO-213AA)
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 35.02
Microchip DirectN/A 1$ 37.72
NewarkEach 100$ 35.02
500$ 33.68

Description

General part information

JANTX2N6300-Darlington Series

This specification covers the performance requirements for NPN silicon power Darlington, 2N6300 and 2N6301 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/539.

Documents

Technical documentation and resources