Technical Specifications
Parameters and characteristics for this part
| Specification | IPS60R1K0CEAKMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 280 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 61 W |
| Rds On (Max) @ Id, Vgs [Max] | 1 Ohm |
| Supplier Device Package | PG-TO251-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.32 | |
| 11017 | $ 0.32 | |||
Description
General part information
IPS60R1 Series
N-Channel 600 V 6.8A (Tj) 61W (Tc) Through Hole PG-TO251-3
Documents
Technical documentation and resources
