Discrete Semiconductor Products

IPS60R1K0PFD7SAKMA1

Obsolete

INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 1000 MOHM; PRICE/PERFORMANCE

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Discrete Semiconductor Products

IPS60R1K0PFD7SAKMA1

Obsolete

INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 1000 MOHM; PRICE/PERFORMANCE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPS60R1K0PFD7SAKMA1

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	26 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPS60R1 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPS60R1K5CEAKMA1	200 pF	49 W	-40 °C	150 °C	9.4 nC	10 V	5 A	1.5 Ohm	PG-TO251-3	Through Hole	MOSFET (Metal Oxide)	20 V	3.5 V	600 V	IPAK TO-251-3 Short Leads TO-251AA	N-Channel
INFINEON IPS60R1K0CEAKMA1		61 W	-40 °C	150 °C		10 V	6.8 A		PG-TO251-3	Through Hole	MOSFET (Metal Oxide)	20 V	3.5 V	600 V	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	280 pF	13 nC	1 Ohm
INFINEON IPS60R1K0PFD7SAKMA1		26 W	-40 °C	150 °C	6 nC	10 V	4.7 A	1 Ohm	PG-TO251-3	Through Hole	MOSFET (Metal Oxide)	20 V	4.5 V	650 V	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	230 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.36
		64370	$ 0.36

Description

General part information

IPS60R1 Series

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPS60R1K0PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPS60R1K0PFD7S in a TO-251 IPAK SL package features RDS(on)of 1,000mOhm resulting in low switching losses. The 600V CoolMOS™ PFD7 SJ MOSFETs come with an integrated fast body diode ensuring a robust device, reducing bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE technologies resulting in an increase in power density by 1.8W/inch3.

Documents

Technical documentation and resources