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Technical Specifications
Parameters and characteristics for this part
| Specification | NX5020UNBKR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 330 mA, 680 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 1.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 20.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 1.7 W |
| Power Dissipation (Max) | 310 mW |
| Rds On (Max) @ Id, Vgs [Max] | 1.8 Ohm |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2790 | $ 0.19 | |
Description
General part information
NX5020UNBK Series
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources