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50 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, N-channel Trench MOSFET
50 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | 50 V | SC-59 SOT-23-3 TO-236-3 | 1.7 W | 310 mW | 20.5 pF | TO-236AB | 1.5 V 10 V | MOSFET (Metal Oxide) | 150 °C | -55 °C | N-Channel | 1 nC | 1.8 Ohm | 950 mV | Surface Mount | 330 mA 680 mA |