
Discrete Semiconductor Products
FES8BT-E3/45
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO220AC

Discrete Semiconductor Products
FES8BT-E3/45
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO220AC
Technical Specifications
Parameters and characteristics for this part
| Specification | FES8BT-E3/45 |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 35 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220AC |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.13 | |
| 50 | $ 0.91 | |||
| 100 | $ 0.72 | |||
| 500 | $ 0.61 | |||
| 1000 | $ 0.50 | |||
| 2000 | $ 0.47 | |||
| 5000 | $ 0.45 | |||
| 10000 | $ 0.43 | |||
Description
General part information
FES8 Series
Diode 100 V 8A Through Hole TO-220AC
Documents
Technical documentation and resources