
Discrete Semiconductor Products
FES8GTHE3/45
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO220AC

Discrete Semiconductor Products
FES8GTHE3/45
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO220AC
Technical Specifications
Parameters and characteristics for this part
| Specification | FES8GTHE3/45 |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-2 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 50 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220AC |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FES8 Series
Diode 400 V 8A Through Hole TO-220AC
Documents
Technical documentation and resources