Specification	STP18N60M2

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	791 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STP18N60M2 Series

N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220 package

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	FET Type	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)
STMicroelectronics STP18N60M2	791 pF	150 °C	-55 °C	TO-220	N-Channel	Through Hole	TO-220-3	13 A	10 V	600 V	MOSFET (Metal Oxide)	280 mOhm	110 W	21.5 nC	4 V	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	285	$ 2.44
Newark	Each	1	$ 3.21
		10	$ 1.87
		100	$ 1.73
		500	$ 1.53
		1000	$ 1.44
		3000	$ 1.36
		5000	$ 1.33

Description

General part information

STP18N60M2 Series

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.