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Automotive, AEC-Q101 Series
Discrete Semiconductor Products

PMN280ENEAX

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Nexperia USA Inc.

100 V, N-CHANNEL TRENCH MOSFET

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Automotive, AEC-Q101 Series
Discrete Semiconductor Products

PMN280ENEAX

Active
Nexperia USA Inc.

100 V, N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN280ENEAX
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds190 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-457, SC-74
Power Dissipation (Max)667 mW, 7.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs385 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.32
100$ 0.16
500$ 0.14
1000$ 0.11
Digi-Reel® 1$ 0.45
10$ 0.32
100$ 0.16
500$ 0.14
1000$ 0.11
N/A 1484$ 0.57
Tape & Reel (TR) 3000$ 0.10
6000$ 0.10
9000$ 0.09
30000$ 0.09
75000$ 0.07

Description

General part information

PMN280ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.