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100 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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100 V, N-channel Trench MOSFET
100 V, N-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | FET Type | Supplier Device Package | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Grade | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 385 mOhm | 100 V | 1.2 A | 6.8 nC | 175 °C | -55 °C | 20 V | N-Channel | 6-TSOP | AEC-Q101 | 4.5 V 10 V | SC-74 SOT-457 | MOSFET (Metal Oxide) | Automotive | 7.5 W 667 mW | 2.7 V | 190 pF | Surface Mount |