Specification	NVMYS4D5N04CTWG

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	55 W, 3.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	4.5 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs(th) (Max) @ Id	3.5 V

NVMYS4D5N04C Series

Power MOSFET 40 V, 4.5mΩ, 80 A, Single N-Channel

Part	Technology	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	FET Type
ON Semiconductor NVMYS4D5N04CTWG	MOSFET (Metal Oxide)	40 V	SOT-1023 4-LFPAK	4.5 mOhm	AEC-Q101	20 A	20 V	Surface Mount	3.5 V	18 nC	3.6 W 55 W	10 V	Automotive	-55 °C	175 ░C	5	LFPAK4	6	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.10
		10	$ 0.90
		100	$ 0.70
		500	$ 0.59
		1000	$ 0.48
	Digi-Reel®	1	$ 1.10
		10	$ 0.90
		100	$ 0.70
		500	$ 0.59
		1000	$ 0.48
	Tape & Reel (TR)	3000	$ 0.45
		6000	$ 0.43
		9000	$ 0.41

Description

General part information

NVMYS4D5N04C Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.