NVMYS4D5N04C Series

Power MOSFET 40 V, 4.5mΩ, 80 A, Single N-Channel

Catalog

Power MOSFET 40 V, 4.5mΩ, 80 A, Single N-Channel

Part	Technology	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	FET Type
ON Semiconductor NVMYS4D5N04CTWG	MOSFET (Metal Oxide)	40 V	SOT-1023 4-LFPAK	4.5 mOhm	AEC-Q101	20 A	20 V	Surface Mount	3.5 V	18 nC	3.6 W 55 W	10 V	Automotive	-55 °C	175 ░C	5	LFPAK4	6	N-Channel

Catalog

Power MOSFET 40 V, 4.5mΩ, 80 A, Single N-Channel

Key Features

• Low RDS(on)

• Low QGand Capacitance

• AEC-Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.