Discrete Semiconductor Products

GAN140-650EBEZ

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650 V, 140 MOHM GALLIUM NITRIDE

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Discrete Semiconductor Products

Active

650 V, 140 MOHM GALLIUM NITRIDE

Technical Specifications

Parameters and characteristics for this part

Specification	GAN140-650EBEZ

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.5 nC
Input Capacitance (Ciss) (Max) @ Vds	125 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max) [Max]	113 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	DFN8080-8
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	7 V
Vgs (Max) [Min]	-1.4 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]
Freescale Semiconductor - NXP GAN140-650EBEZ	125 pF	-55 °C	150 °C	DFN8080-8	17 A	140 mOhm	GaNFET (Gallium Nitride)	6 V	N-Channel	Surface Mount Wettable Flank	650 V	8-VDFN Exposed Pad	2.5 V	113 W	3.5 nC	-1.4 V	7 V
Freescale Semiconductor - NXP GAN140-650FBEZ	125 pF	-55 °C	150 °C	DFN5060-5	17 A	140 mOhm	GaNFET (Gallium Nitride)	6 V	N-Channel	Surface Mount Wettable Flank	650 V	8-PowerVDFN	2.5 V	113 W	3.5 nC	-1.4 V	7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 17A (Tc) 113W (Tc) Surface Mount, Wettable Flank DFN8080-8

Technical documentation and resources