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TO-263
Discrete Semiconductor Products

NTB5D0N15MC

Active
ON Semiconductor

MOSFET - N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> 150 V, 5.0 MΩ, 139 A

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TO-263
Discrete Semiconductor Products

NTB5D0N15MC

Active
ON Semiconductor

MOSFET - N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> 150 V, 5.0 MΩ, 139 A

Technical Specifications

Parameters and characteristics for this part

SpecificationNTB5D0N15MC
Current - Continuous Drain (Id) @ 25°C18 A, 139 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]75 nC
Input Capacitance (Ciss) (Max) @ Vds6300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)214 W, 3.8 W
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.11
10$ 3.75
100$ 3.09
Digi-Reel® 1$ 5.11
10$ 3.75
100$ 3.09
Tape & Reel (TR) 800$ 2.52
NewarkEach (Supplied on Cut Tape) 1$ 6.94
10$ 5.33
25$ 5.01
ON SemiconductorN/A 1$ 2.32

Description

General part information

NTB5D0N15MC Series

MOSFET - N-Channel Shielded Gate PowerTrench®150 V, 5.0 mΩ, 139 A