NTB5D0N15MC Series

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 5.0 mΩ, 139 A

Catalog

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 5.0 mΩ, 139 A

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)
ON Semiconductor NTB5D0N15MC	-55 °C	175 ░C	Surface Mount	75 nC	150 V	N-Channel	TO-263 (D2PAK)	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V	18 A 139 A	MOSFET (Metal Oxide)	6300 pF	3.8 W 214 W	20 V

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 5.0 mΩ, 139 A

• Shielded Gate MOSFET Technology

• Max RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 97 A

• 50% Lower Qrr than other MOSFET Suppliers

• Lowers Switching Noise/EMI

• 100% UIL Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET - N-Channel Shielded Gate PowerTrench®150 V, 5.0 mΩ, 139 A