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DIODE GEN PURP 600V 3A SMC

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 3A SMC

Technical Specifications

Parameters and characteristics for this part

Specification	S3J

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-214AB, SMC
Reverse Recovery Time (trr)	2.5 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Capacitance @ Vr, F	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Speed [Min]	Voltage - Forward (Vf) (Max) @ If [Max]
SMC Diode Solutions S3JB	60 pF	Surface Mount	1.2 V	3 A	DO-214AA SMB	Standard	600 V	2.5 µs	150 °C	-65 C	5 µA	DO-214AA (SMB)	200 mA 500 ns
SMC Diode Solutions S3J	60 pF	Surface Mount		3 A	DO-214AB SMC	Standard	600 V	2.5 µs	175 ░C	-65 C	5 µA	DO-214AB (SMC)	200 mA 500 ns	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources