Discrete Semiconductor Products

S3JB

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DIODE GEN PURP 600V 3A SMB

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 3A SMB

Technical Specifications

Parameters and characteristics for this part

Specification	S3JB

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	2.5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Speed	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package
SMC Diode Solutions S3JB	600 V	DO-214AA SMB	Standard Recovery >500ns	200 mA	2.5 µs	60 pF	1.2 V	Surface Mount	3 A	5 µA	Standard	150 °C	-65 C	SMB	DO-214AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources