Discrete Semiconductor Products
PSMN2R2-100SSEJ
ActiveNexperia USA Inc.
N-CHANNEL 100 V, 2.3 MOHM ASFET WITH ENHANCED SOA IN LFPAK88
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Discrete Semiconductor Products
PSMN2R2-100SSEJ
ActiveNexperia USA Inc.
N-CHANNEL 100 V, 2.3 MOHM ASFET WITH ENHANCED SOA IN LFPAK88
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R2-100SSEJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 255 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 420 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 34776 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1235 |
| Power Dissipation (Max) | 500 W |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 3.06 | |
Description
General part information
PSMN2R2-100SSE Series
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R2-100SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.
Documents
Technical documentation and resources