Discrete Semiconductor Products

GT15J341,S4X

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IGBTS, 600 V/15 A IGBT, BUILT-IN DIODES, TO-220SIS

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Discrete Semiconductor Products

Active

IGBTS, 600 V/15 A IGBT, BUILT-IN DIODES, TO-220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	GT15J341,S4X

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Pulsed (Icm)	60 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	30 W
Reverse Recovery Time (trr)	80 ns
Supplier Device Package	TO-220SIS
Switching Energy	300 µJ, 300 µJ
Td (on/off) @ 25°C [custom]	60 ns
Td (on/off) @ 25°C [custom]	170 ns
Test Condition	300 V, 33 Ohm, 15 A, 15 V
Vce(on) (Max) @ Vge, Ic [Max]	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

IGBTs, 600 V/15 A IGBT, Built-in Diodes, TO-220SIS

Part	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Operating Temperature	Power - Max [Max]	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Test Condition	Vce(on) (Max) @ Vge, Ic [Max]
Toshiba Semiconductor and Storage GT15J341,S4X	300 µJ 300 µJ	60 ns	170 ns	600 V	TO-220-3 Full Pack	150 °C	30 W	60 A	80 ns	Through Hole	15 A	TO-220SIS	15 A 15 V 33 Ohm 300 V	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBTs, 600 V/15 A IGBT, Built-in Diodes, TO-220SIS

Technical documentation and resources