GT15J341 Series
IGBTs, 600 V/15 A IGBT, Built-in Diodes, TO-220SIS
Manufacturer: Toshiba Semiconductor and Storage
Catalog
IGBTs, 600 V/15 A IGBT, Built-in Diodes, TO-220SIS
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IGBTs, 600 V/15 A IGBT, Built-in Diodes, TO-220SIS
IGBTs, 600 V/15 A IGBT, Built-in Diodes, TO-220SIS
IGBTs, 600 V/15 A IGBT, Built-in Diodes, TO-220SIS
| Part | Switching Energy | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Operating Temperature | Power - Max [Max] | Current - Collector Pulsed (Icm) | Reverse Recovery Time (trr) | Mounting Type | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Test Condition | Vce(on) (Max) @ Vge, Ic [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 300 µJ 300 µJ | 60 ns | 170 ns | 600 V | TO-220-3 Full Pack | 150 °C | 30 W | 60 A | 80 ns | Through Hole | 15 A | TO-220SIS | 15 A 15 V 33 Ohm 300 V | 2 V |