Integrated Circuits (ICs)

IRS2109C

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IC GATE DRVR HALF-BRIDGE

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Integrated Circuits (ICs)

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IC GATE DRVR HALF-BRIDGE

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2109C

Driven Configuration	Half-Bridge

Part	Gate Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Package / Case	Driven Configuration	Number of Drivers	Mounting Type	Channel Type	Package / Case	Package / Case
INFINEON IRS2109PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	0.8 V 2.5 V	600 V	8-PDIP	35 ns	100 ns	-40 °C	150 °C	600 mA	290 mA	20 V	10 VDC	Non-Inverting	8-DIP (0.300" 7.62mm)	Half-Bridge	2	Through Hole	Synchronous
INFINEON IRS2109STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	0.8 V 2.5 V	600 V	8-SOIC	35 ns	100 ns	-40 °C	150 °C	600 mA	290 mA	20 V	10 VDC	Non-Inverting	8-SOIC	Half-Bridge	2	Surface Mount	Synchronous	0.154 in	3.9 mm
INFINEON IRS2109PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	0.8 V 2.5 V	600 V	8-PDIP	35 ns	100 ns	-40 °C	150 °C	600 mA	290 mA	20 V	10 VDC	Non-Inverting	8-DIP (0.300" 7.62mm)	Half-Bridge	2	Through Hole	Synchronous
INFINEON IRS2109SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	0.8 V 2.5 V	600 V	8-SOIC	35 ns	100 ns	-40 °C	150 °C	600 mA	290 mA	20 V	10 VDC	Non-Inverting	8-SOIC	Half-Bridge	2	Surface Mount	Synchronous	0.154 in	3.9 mm
INFINEON IRS2109C															Half-Bridge

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Half-Bridge Gate Driver IC

Technical documentation and resources

No documents available