IRS2109 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Gate Type | Logic Voltage - VIL, VIH | High Side Voltage - Max (Bootstrap) [Max] | Supplier Device Package | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Input Type | Package / Case | Driven Configuration | Number of Drivers | Mounting Type | Channel Type | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 2.5 V | 600 V | 8-PDIP | 35 ns | 100 ns | -40 °C | 150 °C | 600 mA | 290 mA | 20 V | 10 VDC | Non-Inverting | 8-DIP (0.300" 7.62mm) | Half-Bridge | 2 | Through Hole | Synchronous | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 2.5 V | 600 V | 8-SOIC | 35 ns | 100 ns | -40 °C | 150 °C | 600 mA | 290 mA | 20 V | 10 VDC | Non-Inverting | 8-SOIC | Half-Bridge | 2 | Surface Mount | Synchronous | 0.154 in | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 2.5 V | 600 V | 8-PDIP | 35 ns | 100 ns | -40 °C | 150 °C | 600 mA | 290 mA | 20 V | 10 VDC | Non-Inverting | 8-DIP (0.300" 7.62mm) | Half-Bridge | 2 | Through Hole | Synchronous | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 2.5 V | 600 V | 8-SOIC | 35 ns | 100 ns | -40 °C | 150 °C | 600 mA | 290 mA | 20 V | 10 VDC | Non-Inverting | 8-SOIC | Half-Bridge | 2 | Surface Mount | Synchronous | 0.154 in | 3.9 mm |
INFINEON | Half-Bridge |