Discrete Semiconductor Products
PSMN1R7-40YLDX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 1.8 MΩ, 200 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY
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Discrete Semiconductor Products
PSMN1R7-40YLDX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 1.8 MΩ, 200 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN1R7-40YLDX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 109 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7966 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Rds On (Max) @ Id, Vgs | 1.8 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.05 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 8240 | $ 3.34 | |
Description
General part information
PSMN1R7-40YLD Series
200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
Documents
Technical documentation and resources