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JANTX2N5303
Discrete Semiconductor Products

JANTX2N5303

Active
Microchip Technology

80V 20A 5W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

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JANTX2N5303
Discrete Semiconductor Products

JANTX2N5303

Active
Microchip Technology

80V 20A 5W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N5303
Current - Collector (Ic) (Max)20 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 hFE
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-3, TO-204AA
Power - Max [Max]5 W
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 160.59
Microchip DirectN/A 1$ 172.94
NewarkEach 100$ 160.59
500$ 154.41

Description

General part information

JANTX2N5303-Transistor Series

This specification covers the performance requirements for NPN, silicon, high-power, 2N5302 and 2N5303 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/456. The device package for the encapsulated device types is a TO-204AA (similar to TO-3).

Documents

Technical documentation and resources