Discrete Semiconductor Products
PSMN1R0-30YLEX
ActiveNexperia USA Inc.
N-CHANNEL 30 V, 1.1 MOHM, ASFET FOR HOTSWAP WITH ENHANCED SOA IN LFPAK56
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Discrete Semiconductor Products
PSMN1R0-30YLEX
ActiveNexperia USA Inc.
N-CHANNEL 30 V, 1.1 MOHM, ASFET FOR HOTSWAP WITH ENHANCED SOA IN LFPAK56
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN1R0-30YLEX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 275 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 119 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7389 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Power Dissipation (Max) [Max] | 224 W |
| Rds On (Max) @ Id, Vgs | 1.11 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4289 | $ 3.67 | |
Description
General part information
PSMN1R0-30YLE Series
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.
Documents
Technical documentation and resources