Discrete Semiconductor Products

BUJ106A,127

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TRANS NPN 400V 10A TO-220AB

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Discrete Semiconductor Products

Active

TRANS NPN 400V 10A TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	BUJ106A,127

Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	14 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Operating Temperature	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
WeEn Semiconductors BUJ106A,127	14 hFE	80 W	100 µA	NPN	1 V	Through Hole	150 °C	TO-220-3	TO-220AB	400 V

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General part information

Bipolar (BJT) Transistor NPN 400 V 10 A 80 W Through Hole TO-220AB

Technical documentation and resources

No documents available