Discrete Semiconductor Products
TK9P65W,RQ
ActiveToshiba Semiconductor and Storage
MOSFETS POWER MOSFET N-CHANNEL
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Discrete Semiconductor Products
TK9P65W,RQ
ActiveToshiba Semiconductor and Storage
MOSFETS POWER MOSFET N-CHANNEL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TK9P65W,RQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.3 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) [Max] | 80 W |
| Rds On (Max) @ Id, Vgs [Max] | 560 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TK9P65W Series
MOSFETS POWER MOSFET N-CHANNEL
Documents
Technical documentation and resources