TK9P65W Series

Catalog

MOSFETS POWER MOSFET N-CHANNEL

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TK9P65W,RQ	9.3 A	20 nC	150 °C	700 pF	MOSFET (Metal Oxide)	80 W	30 V	560 mOhm	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	DPAK	N-Channel	650 V	3.5 V