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STB12N60DM2AG
Discrete Semiconductor Products

STB12N60DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 380 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

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STB12N60DM2AG
Discrete Semiconductor Products

STB12N60DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 380 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB12N60DM2AG
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]14.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]614 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs430 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.38

Description

General part information

STB12N60DM2AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.