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PG-TO251-3
Discrete Semiconductor Products

IPU80R1K0CEBKMA1

Unknown
INFINEON

TRANS MOSFET N-CH 800V 5.7A 3-PIN(3+TAB) TO-251 TUBE

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PG-TO251-3
Discrete Semiconductor Products

IPU80R1K0CEBKMA1

Unknown
INFINEON

TRANS MOSFET N-CH 800V 5.7A 3-PIN(3+TAB) TO-251 TUBE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPU80R1K0CEBKMA1
Current - Continuous Drain (Id) @ 25°C5.7 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds785 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackagePG-TO251-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
1410$ 0.00

Description

General part information

IPU80R Series

N-Channel 800 V 5.7A (Tc) 83W (Tc) Through Hole PG-TO251-3

Documents

Technical documentation and resources