IPU80R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 800V 1.9A TO251-3

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPU80R2K8CEAKMA1	3.9 V	20 V	10 V	Through Hole	2.8 Ohm	42 W	MOSFET (Metal Oxide)	12 nC	800 V	PG-TO251-3	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	290 pF	1.9 A	150 °C	-55 °C
INFINEON IPU80R1K4CEBKMA1	3.9 V	20 V	10 V	Through Hole		63 W	MOSFET (Metal Oxide)		800 V	PG-TO251-3	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	570 pF	3.9 A	150 °C	-55 °C	1.4 Ohm	23 nC
INFINEON IPU80R1K0CEBKMA1	3.9 V	20 V	10 V	Through Hole	950 mOhm	83 W	MOSFET (Metal Oxide)		800 V	PG-TO251-3	N-Channel	IPAK TO-251-3 Short Leads TO-251AA		5.7 A	150 °C	-55 °C		31 nC	785 pF
INFINEON IPU80R2K8CEBKMA1	3.9 V	20 V	10 V	Through Hole	2.8 Ohm	42 W	MOSFET (Metal Oxide)	12 nC	800 V	PG-TO251-3	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	290 pF	1.9 A	150 °C	-55 °C