Discrete Semiconductor Products

TMMBAT43FILM

LTB

30 V, 200 MA VF 0.33 V @ 2 MA MINIMELF GENERAL PURPOSE SIGNAL SCHOTTKY DIODE

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Discrete Semiconductor Products

LTB

30 V, 200 MA VF 0.33 V @ 2 MA MINIMELF GENERAL PURPOSE SIGNAL SCHOTTKY DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	TMMBAT43FILM

Capacitance @ Vr, F	7 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AA (Glass)
Reverse Recovery Time (trr)	5 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	Mini MELF
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

30 V, 200 mA Vf 0.33 V @ 2 mA Minimelf General Purpose Signal Schottky Diode

Part	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Speed	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package
STMicroelectronics TMMBAT43FILM	500 nA	DO-213AA (Glass)	-65 C	125 °C	7 pF	5 ns	30 V	Surface Mount	200 mA	Any Speed	Schottky	200 mA	1 V	Mini MELF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

General purpose metal to silicon diode featuring very low turn-on voltage and fast switching.

These devices have integrated protection against excessive voltage such as electrostatic discharges.

Technical documentation and resources