Discrete Semiconductor Products

BSC019N04LSTATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

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Discrete Semiconductor Products

BSC019N04LSTATMA1

Active

INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC019N04LSTATMA1

Current - Continuous Drain (Id) @ 25°C	161 A, 28 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds	4060 pF
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSC019 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs
INFINEON BSC019N04NSGATMA1	150 °C	-55 °C	20 V	1.9 mOhm	40 V	2.5 W 125 W	MOSFET (Metal Oxide)	8800 pF	Surface Mount	4 V	8-PowerTDFN	30 A 100 A	10 V	108 nC	PG-TDSON-8-1	N-Channel
INFINEON BSC019N06NSATMA1	175 °C	-55 °C	20 V	1.95 mOhm	60 V		MOSFET (Metal Oxide)		Surface Mount	3.3 V	8-PowerTDFN	100 A	6 V 10 V	77 nC	PG-TDSON-8 FL	N-Channel	136 W	5250 pF
INFINEON BSC019N02KSGAUMA1	150 °C	-55 °C	12 V	1.95 mOhm	20 V	2.8 W 104 W	MOSFET (Metal Oxide)	13000 pF	Surface Mount	1.2 V	8-PowerTDFN	30 A 100 A			PG-TDSON-8-1	N-Channel			2.5 V	4.5 V	85 nC
INFINEON BSC019N04LSATMA1	175 °C	-55 °C	20 V	1.9 mOhm	40 V	2.5 W 78 W	MOSFET (Metal Oxide)		Surface Mount	2 V	8-PowerTDFN	27 A 100 A	4.5 V 10 V		PG-TDSON-8-1	N-Channel		2900 pF			41 nC
INFINEON BSC019N04LSTATMA1	175 °C	-55 °C	20 V	1.9 mOhm	40 V	94 W	MOSFET (Metal Oxide)	4060 pF		2 V		28 A 161 A	4.5 V 10 V			N-Channel					57 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.20
		10	$ 1.97
		25	$ 1.86
		100	$ 1.59
		250	$ 1.49
		500	$ 1.30
		1000	$ 1.08
		2500	$ 1.00
	Digi-Reel®	1	$ 2.20
		10	$ 1.97
		25	$ 1.86
		100	$ 1.59
		250	$ 1.49
		500	$ 1.30
		1000	$ 1.08
		2500	$ 1.00
	N/A	4989	$ 1.57
	Tape & Reel (TR)	5000	$ 0.97
		10000	$ 0.93

Description

General part information

BSC019 Series

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAXfeature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Documents

Technical documentation and resources