BSC019 Series

Manufacturer: INFINEON

Catalog

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs
INFINEON BSC019N04NSGATMA1	150 °C	-55 °C	20 V	1.9 mOhm	40 V	2.5 W 125 W	MOSFET (Metal Oxide)	8800 pF	Surface Mount	4 V	8-PowerTDFN	30 A 100 A	10 V	108 nC	PG-TDSON-8-1	N-Channel
INFINEON BSC019N06NSATMA1	175 °C	-55 °C	20 V	1.95 mOhm	60 V		MOSFET (Metal Oxide)		Surface Mount	3.3 V	8-PowerTDFN	100 A	6 V 10 V	77 nC	PG-TDSON-8 FL	N-Channel	136 W	5250 pF
INFINEON BSC019N02KSGAUMA1	150 °C	-55 °C	12 V	1.95 mOhm	20 V	2.8 W 104 W	MOSFET (Metal Oxide)	13000 pF	Surface Mount	1.2 V	8-PowerTDFN	30 A 100 A			PG-TDSON-8-1	N-Channel			2.5 V	4.5 V	85 nC
INFINEON BSC019N04LSATMA1	175 °C	-55 °C	20 V	1.9 mOhm	40 V	2.5 W 78 W	MOSFET (Metal Oxide)		Surface Mount	2 V	8-PowerTDFN	27 A 100 A	4.5 V 10 V		PG-TDSON-8-1	N-Channel		2900 pF			41 nC
INFINEON BSC019N04LSTATMA1	175 °C	-55 °C	20 V	1.9 mOhm	40 V	94 W	MOSFET (Metal Oxide)	4060 pF		2 V		28 A 161 A	4.5 V 10 V			N-Channel					57 nC