Discrete Semiconductor Products

FDS8926A

Obsolete

ON Semiconductor

MOSFET 2N-CH 30V 5.5A 8SOIC

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Discrete Semiconductor Products

FDS8926A

Obsolete

ON Semiconductor

MOSFET 2N-CH 30V 5.5A 8SOIC

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS8926A

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	28 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

FDS8958A_F085 Series

Dual N-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 100V, 2.7A, 105mΩ

Part	Supplier Device Package	FET Feature	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Grade	Qualification	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDS8984	8-SOIC	Logic Level Gate	1.6 W	23 mOhm	MOSFET (Metal Oxide)	Surface Mount	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	13 nC	-55 °C	150 °C	30 V	2.5 V	7 A	635 pF
ON Semiconductor FDS8928A	8-SOIC	Logic Level Gate	900 mW	30 mOhm	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	8-SOIC	3.9 mm	0.154 in	28 nC	-55 °C	150 °C	20 V 30 V	1 V	4 A 5.5 A
ON Semiconductor FDS8958A-F085	8-SOIC	Logic Level Gate	900 mW	28 mOhm	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	8-SOIC	3.9 mm	0.154 in	16 nC	-55 °C	150 °C	30 V	3 V	5 A 7 A	575 pF	Automotive	AEC-Q101
ON Semiconductor FDS8958B	8-SOIC	Logic Level Gate	900 mW	26 mOhm	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	8-SOIC	3.9 mm	0.154 in	12 nC	-55 °C	150 °C	30 V	3 V	4.5 A 6.4 A	540 pF
ON Semiconductor FDS8926A	8-SOIC	Logic Level Gate	900 mW	30 mOhm	MOSFET (Metal Oxide)	Surface Mount	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	28 nC	-55 °C	150 °C	30 V	1 V	5.5 A
ON Semiconductor FDS8926
ON Semiconductor FDS8960C	8-SOIC	Logic Level Gate	900 mW		MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	8-SOIC	3.9 mm	0.154 in	7.7 nC	-55 °C	150 °C	35 V	3 V	5 A 7 A	570 pF			24 mOhm
ON Semiconductor FDS8935	8-SOIC	Logic Level Gate	1.6 W	183 mOhm	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	8-SOIC	3.9 mm	0.154 in	19 nC	-55 °C	150 °C	80 V	3 V	2.1 A	879 pF
ON Semiconductor FDS8958B_G	8-SO		900 mW	26 mOhm 51 mOhm	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	8-SOIC	3.9 mm	0.154 in	5.8 nC	-55 °C	150 °C	30 V	3 V	4.5 A 6.4 A	540 pF 760 pF				9.6 nC
ON Semiconductor FDS8978-F40	8-SOIC		1.6 W	18 mOhm	MOSFET (Metal Oxide)	Surface Mount	2 N-Channel 2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in		-55 °C	150 °C	30 V	2.5 V	7.5 A	1270 pF					26 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS8958A_F085 Series

These dual N- and P -Channel enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Documents

Technical documentation and resources