Discrete Semiconductor Products

BYC40W-1200PQ

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BYC40W-1200P/TO247-2L/STANDARD M

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Discrete Semiconductor Products

Active

BYC40W-1200P/TO247-2L/STANDARD M

Technical Specifications

Parameters and characteristics for this part

Specification	BYC40W-1200PQ

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	91 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	3.3 V

Part	Supplier Device Package	Mounting Type	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Technology	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If [Max]
WeEn Semiconductors BYC40W-1200PQ	TO-247-2	Through Hole	175 °C	1.2 kV	250 µA	91 ns	40 A	Standard	TO-247-2	200 mA 500 ns	3.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 40A Through Hole TO-247-2

Technical documentation and resources

No documents available