Discrete Semiconductor Products
VS-8EWS12S-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A DPAK
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Discrete Semiconductor Products
VS-8EWS12S-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A DPAK
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-8EWS12S-M3 |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-252AA (DPAK) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.86 | |
| 75 | $ 2.30 | |||
| 150 | $ 1.89 | |||
| 525 | $ 1.60 | |||
| 1050 | $ 1.36 | |||
| 2025 | $ 1.29 | |||
| 5025 | $ 1.24 | |||
Description
General part information
8EWS12 Series
Diode 1200 V 8A Surface Mount TO-252AA (DPAK)
Documents
Technical documentation and resources