8EWS12 Series

Catalog

DIODE GEN PURP 1.2KV 8A D-PAK

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Speed	Current - Reverse Leakage @ Vr	Technology
Vishay General Semiconductor - Diodes Division VS-8EWS12STRL-M3	150 °C	-55 °C	TO-252AA (DPAK)	Surface Mount	8 A	1.1 V	1.2 kV	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard Recovery >500ns	200 mA	50 µA	Standard
Vishay General Semiconductor - Diodes Division VS-8EWS12S-M3	150 °C	-55 °C	TO-252AA (DPAK)	Surface Mount	8 A	1.1 V	1.2 kV	DPAK (2 Leads + Tab) SC-63 TO-252-3		200 mA 500 ns	50 µA	Standard
Vishay General Semiconductor - Diodes Division VS-8EWS12STRRPBF	150 °C	-55 °C	TO-252AA (DPAK)	Surface Mount	8 A	1.1 V	1.2 kV	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard Recovery >500ns	200 mA	50 µA	Standard
Vishay General Semiconductor - Diodes Division VS-8EWS12STRPBF	150 °C	-55 °C	TO-252AA (DPAK)	Surface Mount	8 A	1.1 V	1.2 kV	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard Recovery >500ns	200 mA	50 µA	Standard
Vishay General Semiconductor - Diodes Division VS-8EWS12SPBF	150 °C	-55 °C	TO-252AA (DPAK)	Surface Mount	8 A	1.1 V	1.2 kV	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard Recovery >500ns	200 mA	50 µA	Standard