Zenode.ai Logo
Beta
No image
Discrete Semiconductor Products

JANTX2N5660

Active
Microchip Technology

NPN SILICON POWER 200V TO 300V, 5A

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

JANTX2N5660

Active
Microchip Technology

NPN SILICON POWER 200V TO 300V, 5A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N5660
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeSurface Mount
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]2 W
Supplier Device PackageTO-66 (TO-213AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectN/A 1$ 336.54

Description

General part information

JANTX2N5660-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454.

Documents

Technical documentation and resources